EN27LN1G08 Datasheet, PDF (2/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

General Description
EN27LN1G08
Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V
VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A
program operation can be performed in typical 200us on the 2,112-byte page and an erase operation
can be performed in typical 1.5ms on a (128K+4K) bytes block. Data in the data register can be read out
at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as
command input. The on-chip write controller automates all program and erase functions including pulse
repetition, where required, and internal verification and margining of data. Even the write-intensive
systems can take advantage of this device’s extended reliability of 100K program/erase cycles by
providing ECC (Error Correcting Code) with real time mapping-out algorithm.
This device is an optimum solution for large nonvolatile storage applications such as solid state file
storage and other portable applications requiring non-volatility.
Pin Configuration
(TOP VIEW)
(TSOPI 48L, 12mm X 20mm Body, 0.5mm Pin Pitch)
NC
1
NC
2
NC
3
NC
4
NC
5
NC
6
RY/B#
7
RE#
8
CE#
9
NC
10
NC
11
Vcc
12
Vss
13
NC
14
NC
15
CLE
16
ALE
17
WE#
18
WP#
19
NC
20
NC
21
NC
22
NC
23
NC
24
Standard
TSOP
48
NC
47
NC
46
NC
45
NC
44
I/O7
43
I/O6
42
I/O5
41
I/O4
40
NC
39
NC
38
NC
37
Vcc
36
Vss
35
NC
34
NC
33
NC
32
I/O3
31
I/O2
30
I/O1
29
I/O0
28
NC
27
NC
26
NC
25
NC
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03