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EN27LN1G08 Datasheet, PDF (12/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory
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EN27LN1G08
AC Characteristics for Operation
Parameter
Symbol
Min.
Max.
Unit
Data Transfer from Cell to Register
tR
-
ALE to RE# Delay
tAR
10
CLE to RE# Delay
tCLR
10
Ready to RE# Low
tRR
20
RE# Pulse Width
tRP
12
WE# High to Busy
tWB
-
Read Cycle Time
tRC
25
RE# Access Time
tREA
-
CE# Access Time
tCEA
-
RE# High to Output Hi-Z
tRHZ
-
CE# High to Output Hi-Z
tCHZ
-
CE# High to ALE or CLE Don’t Care
tCSD
0
RE# High to Output Hold
tRHOH
15
RE# Low to Output Hold
tRLOH
5
CE# High to Output Hold
tCOH
15
RE# High Hold Time
tREH
10
Output Hi-Z to RE# Low
tIR
0
RE# High to WE# Low
tRHW
100
WE# High to RE# Low
tWHR
60
Read
-
Device Resetting
Program
-
Time during ...
Erase
tRST
-
Ready
-
25
us
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
20
ns
25
ns
100
ns
30
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5(1)
us
10(1)
us
500(1)
us
5(1)
us
Note:
1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is
not guaranteed by Eon. Information regarding the initial invalid block(s) is so called as the initial invalid
block information. Devices with initial invalid block(s) have the same quality level as devices with all
valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not affect the
performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address
mapping.
The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K
program/erase cycles with 1 bit/528 bytes ECC.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03
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