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| EN27LN1G08 Datasheet, PDF (22/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory | |||
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Random Data Output In a Page
EN27LN1G08
Page Program Operation
Note: tADL is the time from WE# rising edge of final address cycle to the WE# rising edge of first data
cycle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03
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