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1GB-DDR3L-AS4C128M8D3L Datasheet, PDF (58/88 Pages) Alliance Semiconductor Corporation – internal banks for concurrent operation
1Gb DDR3L – AS4C128M8D3L
- Slew Rate Definition for Differential Input Signals
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured as shown below.
Table 31. Differential Input Slew Rate Definition
Description
Measured
From
To
Defined by
Differential input slew rate for rising edge
VILdiffmax VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff
(CK, CK# and DQS, DQS#)
Differential input slew rate for falling edge
VIHdiffmin VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff
(CK, CK# and DQS, DQS#)
NOTE: The differential signal (i.e., CK, CK# and DQS, DQS#) must be linear between these thresholds.
Table 32. Single-ended AC and DC Output Levels
Symbol
Parameter
-12
Unit Note
VOH(DC) DC output high measurement level (for IV curve linearity)
0.8 x VDDQ
V
VOM(DC) DC output mid measurement level (for IV curve linearity)
0.5 x VDDQ
V
VOL(DC) DC output low measurement level (for IV curve linearity)
0.2 x VDDQ
V
VOH(AC) AC output high measurement level (for output SR)
VTT + 0.1 x VDDQ
V
1
VOL(AC) AC output low measurement level (for output SR)
VTT - 0.1 x VDDQ
V
1
NOTE 1: The swing of ± 0.1 × VDDQ is based on approximately 50% of the static single-ended output high or low swing
with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2.
Table 33. Differential AC and DC Output Levels
Symbol
Parameter
-12
Unit Note
VOHdiff(AC) AC differential output high measurement level (for output SR) + 0.2 x VDDQ
V
1
VOLdiff(AC) AC differential output low measurement level (for output SR) - 0.2 x VDDQ
V
1
NOTE 1: The swing of ± 0.2 × VDDQ is based on approximately 50% of the static single-ended output high or low swing
with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2 at each of the differential
outputs.
Confidential
58
Rev. 2.0
Aug. /2014