1GB-DDR3L-AS4C128M8D3L Datasheet, PDF (21/88 Pages) Alliance Semiconductor Corporation – internal banks for concurrent operation

1Gb DDR3L – AS4C128M8D3L
Table 10. Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Unit Note
V_DD
Voltage on VDD pin relative to Vss
-0.4 ~ 1.8
V 1,3
V_DDQ
Voltage on VDDQ pin relative to Vss
-0.4 ~ 1.8
V 1,3
V_IN, V_OUT Voltage on any pin relative to Vss
-0.4 ~ 1.8
V
1
T_STG
Storage temperature
-55~100
°C ^1,2
NOTE1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
NOTE2: Storage Temperature is the case surface temperature on the center/top side of the DRAM.
NOTE3: VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ,
when VDD and VDDQ are less than 500mV; Vref may be equal to or less than 300mV.
Table 11. Temperature Range
Symbol
Parameter
Rating
Unit Note
Operating case temperature Range
0~85
°C ^1,2
T_OPER
Extended Temperature Range
85~95
°C ^1,3
Industrial Temperature Range
-40~95
°C ^1-4
NOTE1: Operating temperature is the case surface temperature on center/top of the DRAM.
NOTE2: The operating temperature range is the temperature where all DRAM specification will be supported.
Outside of this temperature range, even if it is still within the limit of stress condition, some deviation on portion of
operating specification may be required. During operation, the DRAM case temperature must be maintained
between 0-85 ° C under all other specification parameter. Supporting 0 - 85 °C with full JEDEC AC & DC
specifications.
NOTE3: Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C
case temperature. Full specifications are guaranteed in this range, but the following additional apply.
a) Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us. It is
also possible to specify a component with 1x refresh (tREFI to 7.8us) in the Extended Temperature Range.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the
Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6=0 and MR2 A7=1) or enable
the optional Auto Self-Refresh mode (MR2 A6=1 and MR2 A7=0).
NOTE4: During Industrial Temperature Operation Range, the DRAM case temperature must be maintained between
-40°C~95°C under all operating Conditions.
Table 12. Recommended DC Operating Conditions
Symbol
Parameter
Operation
Voltage
Min.
Rating
Typ.
Max
Units
VDD
Supply Voltage
1.35V
1.283
1.35
1.45
V
1.5V
1.425
1.5
1.575
V
VDDQ Supply Voltage for Output
1.35V
1.283
1.35
1.45
V
1.5V
1.425
1.5
1.575
V
NOTES:
1. Under all conditions VDDQ must be less than or equal to VDD
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. VDD & VDDQ rating are determined by operation voltage.
Note
1,2,3
1,2,3
1,2,3
1,2,3
Confidential
21
Rev. 2.0
Aug. /2014