W25Q256FVBIF-TR Datasheet, PDF (96/108 Pages) Winbond – 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q256FV
9.4 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL CONDITIONS
CIN⁽¹⁾
Cout⁽¹⁾
VIN = 0V
VOUT = 0V
SPEC
MIN
TYP
MAX
6
8
Input Leakage
ILI
±2
I/O Leakage
ILO
±2
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
10
50
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
25
Current Read Data /
Dual /Quad 50MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
15
Current Read Data /
Dual /Quad 80MHz
Current Read Data /
Dual Output Read/Quad
Output Read 104MHz
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
ICC3⁽²⁾
ICC3⁽²⁾
ICC4
ICC5
ICC6
ICC7
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
18
20
8
12
20
25
20
25
20
25
Input Low Voltage
VIL
–0.5
VCC x 0.3
Input High Voltage
VIH
VCC x 0.7
VCC + 0.4
Output Low Voltage
VOL
IOL = 100 µA
0.2
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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