W25Q256FVBIF-TR Datasheet, PDF (72/108 Pages) Winbond – 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q256FV
8.2.32 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in Figure 36a & 36b.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
Mode 3
Mode 0
DI
(IO₀)
01234567
Instruction (7Ah)
Mode 3
Mode 0
Resume previously
suspended Program or
Erase
Figure 36a. Erase/Program Resume Instruction (SPI Mode)
/CS
CLK
IO₀
Mode 3
Mode 0
01
Instruction
7Ah
Mode 3
Mode 0
IO₁
IO₂
IO₃
Resume previously
suspended Program or
Erase
Figure 36b. Erase/Program Resume Instruction (QPI Mode)
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