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W9751G8JB Datasheet, PDF (41/86 Pages) Winbond – 16M  4 BANKS  8 BIT DDR2 SDRAM
W9751G8JB
Operating Burst Read Current
All banks open, Continuous burst reads, IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
IDD4R tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
120
85
80
mA
1,2,3,4,5,
6
CKE is HIGH, CS is HIGH between valid commands;
IDD4W
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Operating Burst Write Current
All banks open, Continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
125
110
105
mA
1,2,3,4,5,
6
IDD5B
Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
Burst Refresh Current
tCK = tCK(IDD);
Refresh command every tRFC(IDD) interval;
CKE is HIGH, CS is HIGH between valid commands;
85
80
80
mA
1,2,3,4,5,
6
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
Self Refresh Current
IDD6
CKE ≤ 0.2 V, external clock off, CLK and CLK at 0 V;
Other control and address inputs are FLOATING;
6
6
6
mA
1,2,3,4,5,
6,7
Data bus inputs are FLOATING. (TCASE ≤ 85°C)
Operating Bank Interleave Read Current
All bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD(IDD) - 1 x tCK(IDD);
tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD =
IDD7
tRCD(IDD);
135
120
110
mA
1,2,3,4,5,
6
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during deselects;
Data Bus inputs are SWITCHING.
Notes:
1. VDD = 1.8 V 0.1V; VDDQ = 1.8 V 0.1V.
2. IDD specifications are tested after the device is properly initialized.
3. Input slew rate is specified by AC Parametric Test Condition.
4. IDD parameters are specified with ODT disabled.
5. Data Bus consists of DQ, DM, DQS, DQS , RDQS, RDQS .
6. Definitions for IDD
LOW = Vin ≤ VIL (ac) (max)
HIGH = Vin ≥ VIH (ac) (min)
STABLE = inputs stable at a HIGH or LOW level
FLOATING = inputs at VREF = VDDQ/2
SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
7. The following IDD values must be derated (IDD limits increase), when TCASE ≥ 85°C IDD2P must be derated by 20 %;
IDD3P(slow) must be derated by 30 % and IDD6 must be derated by 80 %. (IDD6 will increase by this amount if TCASE < 85°C
and the 2X refresh option is still enabled)
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Publication Release Date: Oct. 12, 2010
Revision A01