TH58NVG1S3AFT Datasheet, PDF (31/32 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58NVG1S3AFT05
(14) Failure phenomena for Program and Erase operations
The device may fail during a Program or Erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
FAILURE MODE
Block
Erase Failure
Page
Programming Failure
Programming Failure
Single Bit
“ 1 to 0 “
DETECTION AND COUNTERMEASURE SEQUENIE
Status Read after Erase o Block Replacement
Status Read after Program o Block Replacement
(1) Block Verify after Program o Retry
(2) ECC
x ECC : Error Correction Code .
x Block Replacement
Program
Error occurs
Buffer
memory
Block A
Block B
When an error happens in Block A, try to
reprogram the data into another Block (Block
B) by loading from an external buffer. Then,
prevent further system accesses to Block A ( by
creating a bad block table or by using another
appropriate scheme).
Figure 28.
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
(15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery
is low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data and/or
damage to data.
2003-05-19A 31/32