TH58NVG1S3AFT Datasheet, PDF (19/32 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Auto Page Program Operation
TH58NVG1S3AFT05
The device carries out an Automatic Page Program operation when it receives a "10H" Program command
after the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
CLE
/CE
/WE
ALE
RE
RY / BY
80H
I/O
Din Din Din
Din 10h
70h ^Status
Out
Col. M Page P
Data
Data input
Program
Selected
page
Reading & verification
The data is transferred (programmed) from the register to
the selected page on the rising edge of WE following input of
the “ 10H command. After programming, the programmed data
is transferred back to the register to be automatically verified
by the device. If the programming does not succeed, the
Program/Verify operation is repeated by the device until
success is achieved or until the maximum loop number set in
the device is reached.
Figure 7. Auto Page Program operation
Auto Block Erase
The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “DOH”
which follows the Erase Setup command "60H". This three-cycle process for Erase operations acts as an extra
layer of protection from accidental erasure of data due to external noise. The device automatically executes the
Erase and Verify operations.
RY / BY
60
Block Address
input : 3 cycles
D0
Erase Start
command
Busy
70
Status Read
command
Pass
I/O
Fail
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