TH58NVG1S3AFT Datasheet, PDF (3/32 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58NVG1S3AFT05
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN.
TYP.
MAX
UNIT
N_VB
Number of Valid Blocks
2008
-
2048
Blocks
(1) The TH58NVG1S3A occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC
Power Supply Voltage
V_IH
High Level input Voltage
V_IL
Low Level Input Voltage
* 2 V (pulse width lower than 20 ns)
MIN
2.7
2.0
0.3*
TYP.
3.3


MAX
3.6
V_CC  0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta 0 to 70ˆ, V_CC 2.7V ~ 3.3 V)
SYMBOL
PARAMETER
CONDITION
MIN
I_IL
Input Leakage Current
V_IN 0 V to V_CC

I_LO
Output Leakage Current
V_OUT 0 V to V_CC

I_CCO1
Reading
CE V_IL, I_OUT 0 mA, t_cycle 50 ns

I_CCO7
Programming Current


I_CCO8
Erasing Current


I_CCS1
Standby Current
CE V_{IH ,} WP 0V/VCC

I_CCS2
Standby Current
CE V_CC  0.2 V_, WP 0V/VCC

V_OH
High Level Output Voltage
Vcc, I_OH 400 PA
2.4
V_OL
Low Level Output Voltage
Vcc, I_OL 2.1 mA

I_OL ( RY / BY ) Output current of RY / BY pin V_OL 0.4 V

TYP.


10
10
10




8
MAX
r10
r10
30
30
30
1
50

0.4

UNIT
PA
PA
mA
mA
mA
mA
PA
V
V
mA
2003-05-19A 3/32