DRV3201-Q1_16 Datasheet, PDF (7/60 Pages) Texas Instruments – DRV3201-Q1 3 Phase Motor Driver-IC for Automotive Safety Applications

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DRV3201-Q1
SLVSBD6D – MAY 2012 – REVISED AUGUST 2015
6 Specifications
6.1 Absolute Maximum Ratings
over operating temperature T_J = –40°C to 150°C⁽¹⁾⁽²⁾
DC voltage
Supply voltage, transient 1s
Source high-side voltage
Source low-side voltage
Gate-source high-side voltage
difference
Gate low-side voltage
Source low-side voltage
Gate-source low-side voltage
difference
Boost converter
Current sense input voltage
VS, VSH
VS, negative voltages with minimum serial resistor (5 Ω)
VS, VSH
VS, negative voltages with external protection NMOS
VS, VSH
VS, negative voltages with minimum serial resistor (5 Ω)
VS, VSH
Gate high-side voltage
GHSx
SHSx
GHSx-SHSx,
External driven, internal limited (see V_GS,HS,high in Electrical Characteristics)
GLSx
SLSx
GLSx-SLSx
External driven, internal limited (see V_GS,LS,high in Electrical Characteristics)
BOOST, SW
Negative voltage with minimum serial resistor (5 Ω)
BOOST, SW
Negative voltage with external protection NMOS
INx, IPx
Current sense output voltage
Ox
Analog input voltage
VDDIO, ADREF
Digital input voltage
ILSx,IHSx, EN, DRVOFF, SCLK, NCS, SDI, RSTN, CSM, B_EN
Analog input voltage
SCTH
Difference one GND or NC to any
other GND or NC
GNDA, GNDL, GNDLS_B, PGND, NC
Maximum slew rate of SHSx pins
Analog/digital output voltages
SR_SHS
ERR, SDO, PHxC, RO
Unused pins. Connect to GND
TEST, AMUX, NC
Analog input voltage
RI
Internal supply voltage
VCC3
Internal supply voltage
VCC5
Current sense input current
INx, IPx clamping current, Clamping current
Ox forced input current
Forced input/output current
ERR, SDO, PHxC, RO
Short-to-ground current
I_VCC5, Internal current limit
Short-to-ground current
VCC3, Limited by VCC5
Operating virtual junction temperature range, T_J
Storage temperature range, T_stg
MIN
–5
–1
–5
–1
–7
–7
–0.3
–7
–7
–0.3
–0.3
–1
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–150
–0.3
–0.3
–0.3
–0.3
–0.3
–5
–10
–10
–40
–40
MAX
38
38
42
42
47
42
15
20
7
15
60
60
42
ADREF
+0.3
8
18
18
0.3
150
8
0.3
18
3.6
8
5
10
10
40
40
150
165
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V/µs
V
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal, unless otherwise specified.
6.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM),
per AEC Q100-002⁽¹⁾
SHSx to SHSx and GND
all other pins to any other pin
Charged device model (CDM), per AEC Q100-011
VALUE
±4000
±2000
±500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
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