LM3S6422 Datasheet, PDF (562/609 Pages) Texas Instruments – Stellaris® LM3S6422 Microcontroller

Electrical Characteristics
18.1.6
■ V_DDA = 3.3 V
■ V_DDPHY = 3.3 V
■ Temperature = 25°C
■ Clock Source (MOSC) =3.579545 MHz Crystal Oscillator
■ Main oscillator (MOSC) = enabled
■ Internal oscillator (IOSC) = disabled
Table 18-5. Detailed Power Specifications
Parameter Parameter Name Conditions
Run mode 1
(Flash loop)
V_DD25 = 2.50 V
Code= while(1){} executed out of
Flash
Peripherals = All ON
System Clock = 25 MHz (with PLL)
Run mode 2
(Flash loop)
V_DD25 = 2.50 V
Code= while(1){} executed out of
Flash
I_{DD_RUN}
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
Run mode 1
(SRAM loop)
V_DD25 = 2.50 V
Code= while(1){} executed in SRAM
Peripherals = All ON
System Clock = 25 MHz (with PLL)
Run mode 2
(SRAM loop)
V_DD25 = 2.50 V
Code= while(1){} executed in SRAM
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
I_{DD_SLEEP} Sleep mode
V_DD25 = 2.50 V
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
I_{DD_DEEPSLEEP} Deep-Sleep mode LDO = 2.25 V
Peripherals = All OFF
System Clock = IOSC30KHZ/64
a. Pending characterization completion.
3.3 V V_DD, V_DDA,
V_DDPHY
Nom
Max
48 pending^a
5
pending^a
48 pending^a
5
pending^a
5
pending^a
4.6 pending^a
2.5 V V_DD25
Nom Max
64 pending^a
33 pending^a
56 pending^a
26 pending^a
12 pending^a
0.21 pending^a
Unit
mA
mA
mA
mA
mA
mA
Flash Memory Characteristics
Table 18-6. Flash Memory Characteristics
Parameter
PE_CYC
Parameter Name
Number of guaranteed program/erase cycles
before failure^a
Min
10,000
Nom
Max
100,000
-
Unit
cycles
562
June 18, 2012
Texas Instruments-Production Data