K4X56163PE Datasheet, PDF (9/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the two temperature range ; Max. 40 °C, Max. 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Self Refresh Current (Icc 6)
Temperature Range
Unit
Full Array
1/2 Array
1/4 Array
Max. 40 °C
150
125
115
uA
Max. 85 °C
400
300
250
Partial Array Self Refresh (PASR )
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full Array, 1/2 Array, 1/4 Array.
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
Figure.3 EMRS code and TCSR , PASR
9
March 2004