K4X56163PE Datasheet, PDF (40/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Write with Auto Precharge (@BL=8)
Mobile-DDR SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CK
CK
CKE
HIGH
CS
RAS
CAS
BA0,BA1
BAa
BAb
A10/AP
ADDR
Ca
(A0~An)
WE
DQS
Ra
Cb
Auto precharge start
tWR
tRP
Note 1
DQ
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
DM
COMMAND
WRITE
ACTIVE
Note: 1. The row active command of the precharge bank can be issued after tRP from this point
The new read/write command of another activated bank can be issued from this point
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
: Don’t care
40
March 2004