K4X56163PE Datasheet, PDF (12/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
Essential Functionality for DDR SDRAM
The essential functionality that is required for the DDR SDRAM device is described in this chapter
Burst Read Operation
Burst Read operation in DDR SDRAM is in the same manner as the SDRAM such that the Burst read command is issued by assert-
ing CS and CAS low while holding RAS and WE high at the rising edge of the clock(CK) after tRCD from the bank activation. The
address inputs (A0~A9) determine the starting address for the Burst. The Mode Register sets type of burst(Sequential or interleave)
and burst length(2, 4, 8). The first output data is available after the CAS Latency from the READ command, and the consecutive data
are presented on the falling and rising edge of Data Strobe(DQS) adopted by DDR SDRAM until the burst length is completed.
< Burst Length=4, CAS Latency= 3 >
0
1
2
3
CK
CK
Command READ A
NOP
NOP
NOP
4
NOP
5
NOP
DQS
CAS Latency=3
DQs
tSAC
tRPRE
Preamble
tRPST
Postamble
Dout 0 Dout 1 Dout 2 Dout 3
6
NOP
7
NOP
8
NOP
Figure.5 Burst read operation timing
12
March 2004