K4X56163PE Datasheet, PDF (27/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Functional truth table
Current State
PRECHARGING
(DURING tRP)
ROW
ACTIVATING
(FROM ROW
ACTIVE TO
tRCD)
WRITE
RECOVERING
(DURING tWR
OR tCDLR)
CS RAS CAS WE
Address
L
H
H
LX
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
L
H
H
LX
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
L
H
H
LX
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
Mobile-DDR SDRAM
Command
Burst Stop
READ/WRITE
Active
PRE/PREA
Refresh
MRS
Burst Stop
READ/WRITE
Active
PRE/PREA
Refresh
MRS
Burst Stop
READ
WRITE
Active
PRE/PREA
Refresh
MRS
Action
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
NOP*4(Idle after tRP)
ILLEGAL
ILLEGAL
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
ILLEGAL*2
ILLEGAL*2
WRITE
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
27
March 2004