K4X56163PE Datasheet, PDF (39/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Read with Auto Precharge (@BL=8)
Mobile-DDR SDRAM
0
1
2
3
4
5
6
7
8
CK
CK
CKE
HIGH
CS
RAS
CAS
BA0,BA1
BAa
A10/AP
ADDR
(A0~An)
Ca
WE
DQS
(CL=3)
DQ
(CL=3)
DM
Auto precharge start
tRP
Note 1
Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
COMMAND
READ
Note: The row active command of the precharge bank can be issued after tRP from this point
The new read/write command of another activated bank can be issued from this point
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
9
10
BAb
Ra
Cb
ACTIVE
: Don’t care
39
March 2004