K4X56163PE Datasheet, PDF (32/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
3. Definitions for IDD:
LOW is defined as V IN ≤ 0.1 * V DDQ ;
HIGH is defined as V IN ≥ 0.9 * V DDQ ;
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
AC Operating Conditions & Timming Specification
Parameter/Condition
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
Input Crossing Point Voltage, CK and CK inputs
VIH(AC)
0.8 x VDDQ
VDDQ+0.3
V
VIL(AC)
-0.3
0.2 x VDDQ
V
VIX(AC)
0.4 x VDDQ
0.6 x VDDQ
V
Note : 1. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation.
2. The value of V_IX is expected to equal 0.5*V_DDQ of the transmitting device and must track variations in the DC level of the same.
Note
1
1
2
32
March 2004