K4X56163PE Datasheet, PDF (21/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
Write with Auto Precharge
If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new command to the same
bank should not be issued until the internal precharge is completed. The internal precharge begins after keeping tWR(min).
< Burst Length=4 >
0
1
2
CK, CK
BANK A
Command _ACTIVE
NOP
NOP
3
4
5
NOP ^{WRITE A} NOP
Auto Precharge
6
NOP
7
NOP
8
9
10
11
NOP NOP NOP
NOP
DQS
DQs
Din 0 Din 1 Din 2 Din 3
* Bank can be reactivated at
completion of tRP
tWR
tRP
Internal precharge start ^*1
Figure 15. Write with auto precharge timing
*Note : 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal
21
March 2004