K4X56163PE Datasheet, PDF (26/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
Functional truth table
Current State
WRITE
CS RAS CAS WE
L
H
H
LX
Address
L
H
L
H BA, CA, A10
Command
Burst Stop
READ/READA
Action
ILLEGAL
Terminate Burst With DM=High, Latch CA,
Begin Read, Determine Auto-Precharge*3
L
H
L
L BA, CA, A10
Terminate Burst, Latch CA,
WRITE/WRITEA ^{Begin new Write, Determine Auto-Pre-}
charge*3
L
L
H
H BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L BA, A10
PRE/PREA
Terminate Burst With DM=High,
Precharge
L
L
L
HX
Refresh
ILLEGAL
L
L
L
L Op-Code, Mode-Add MRS
ILLEGAL
READ with
L
H
H
LX
AUTO
PRECHARGE^{*6 L}
H
L
H BA, CA, A10
(READA)
L
H
L
L BA, CA, A10
Burst Stop
ILLEGAL
READ/READA *6
WRITE/WRITEA ILLEGAL
L
L
H
H BA, RA
Active
*6
L
L
H
L BA, A10
PRE/PREA
*6
L
L
L
HX
Refresh
ILLEGAL
L
L
L
L Op-Code, Mode-Add MRS
ILLEGAL
WRITE with
L
HH
LX
AUTO
RECHARGE^*7
L
H
L
H BA, CA, A10
(WRITEA)
L
H
L
L BA, CA, A10
Burst Stop
ILLEGAL
READ/READA *7
WRITE/WRITEA *7
L
L
H
H BA, RA
Active
*7
L
L
H
L BA, A10
PRE/PREA
*7
L
L
L
HX
Refresh
ILLEGAL
L
L
L
L Op-Code, Mode-Add MRS
ILLEGAL
26
March 2004