K4X56163PE Datasheet, PDF (5/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Power Up Sequence for Mobile DDR SDRAM
Mobile-DDR SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
CK
CK
CKE
Hi
CS
RAS
CAS
ADDR
Key
Key
RAa
BA0
BA1
A10/AP
RAa
DQ
Hi-Z
Hi-Z
WE
DQM
High level is necessary
tRP
tARFC
tARFC
Precharge
(All Bank)
Auto
Refresh
Auto
Refresh
Normal
MRS
Row Active
(A-Bank)
Extended
MRS
Note:
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define PASR or DS operating type of the device after normal MRS.
: Don’t care
EMRS cycle is not mandatory and the EMRS command needs to be issued only when either PASR or DS is used.
The default state without EMRS command issued is half driver strength, and Full array refreshed .
The device is now ready for the operation selected by EMRS.
For operating with PASR or DS, set PASR or DS mode in EMRS setting stage.
In order to adjust another mode in the state of PASR or DS mode, additional EMRS set is required but power up sequence is not needed again at this
time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
5
March 2004