K4X56163PE Datasheet, PDF (20/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
Read With Auto Precharge
If a read with auto-precharge command is issued, the DDR SDRAM automatically enters the precharge operation BL/2 clock later
from a read with auto-precharge command when tRAS(min) is satisfied. If not, the start point of precharge operation will be delayed
until tRAS(min) is satisfied. Once the precharge operation has started, the bank cannot be reactivated and the new command can not
be asserted until the precharge time(tRP) has been satisfied.
< Burst Length=4, CAS Latency= 3>
0
1
2
3
4
5
6
7
8
9
10
11
CK, CK
BANK A
Command _ACTIVE
NOP
NOP
DQS
CAS Latency=3
DQs
NOP ^{READ A} NOP
Auto Precharge
NOP
NOP
NOP NOP NOP
NOP
tRP
* Bank can be reactivated at
completion of tRP
tRAS(min)
Dout0 Dout1 Dout2 Dout3
Auto-Precharge starts^*1
Figure.14 Read with auto precharge timing
*Note : 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal
20
March 2004