K4X56163PE Datasheet, PDF (19/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
DM masking
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read cycle. When the data mask
is activated (DM high) during write operation, DDR SDRAM does not accept the corresponding data.(DM to data-mask latency is
zero).
DM must be issued at the rising or falling edge of data strobe.
< Burst Length=8 >
0
1
2
3
4
5
CK, CK
Command
DQS
DQs
WRITE
NOP
tDQSSmax
NOP
NOP
NOP
NOP
tWPRES tWPREH
Din 0 Din 1 Din 2 Din 3 Din 4 Din 5 Din 6 Din7
DM
masked by DM=H
6
NOP
7
NOP
8
NOP
Figure.13 DM masking timing
19
March 2004