K4X56163PE Datasheet, PDF (35/48 Pages) Samsung semiconductor – 16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G
Mobile-DDR SDRAM
AC Operating Test Conditions(VDD = 1.7V - 1.95V, TA = -25 to 85°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input signal minimum slew rate
Output timing measurement reference level
Output load condition
Value
0.8 x VDDQ / 0.2 x VDDQ
0.5 x VDDQ
1.0
0.5 x VDDQ
See Fig. 2
Unit
V
V
V/ns
V
1.8V
Output
10.6KΩ
13.9KΩ
VOH (DC) = 0.9 x VDDQ, IOH = -0.1mA
VOL (DC) = 0.1 x VDDQ, IOL = 0.1mA
30pF
Output
Z0=50Ω
Vtt=0.5 x VDDQ
50Ω
30pF
(Fig. 1) DC Output Load Circuit
(Fig. 2) AC Output Load Circuit
Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA= 25°C, f=1MHz)
Parameter
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Symbol
Min
Max
Unit
CIN1
1.5
3.0
pF
CIN2
1.5
3.0
pF
COUT
3.0
5.0
pF
CIN3
3.0
5.0
pF
35
March 2004