K4B2G0446D Datasheet, PDF (60/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
Rev. 1.01
DDR3L SDRAM
[ Table 57 ] Required time t_VAC above V_IH(AC) {blow V_IL(AC)} for valid transition
Slew Rate[V/ns]
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
t_VAC[ps] DDR3-800/1066 (AC175)
min
max
75
-
57
-
50
-
38
-
34
-
29
-
22
-
13
-
0
-
0
-
t_VAC[ps] DDR3-800/1066/1333/1600 (AC150)
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
155
-
150
-
- 60 -