K4B2G0446D Datasheet, PDF (45/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
Rev. 1.01
DDR3L SDRAM
[ Table 47 ] DDR3-1333 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
Supported CL Settings
Supported CWL Settings
CWL = 5
CWL = 6,7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5,6
CWL = 7
CWL = 5,6
CWL = 7
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
DDR3-1333
9 -9 - 9
min
13.5
(13.125)⁸
13.5
(13.125)⁸
13.5
(13.125)⁸
49.5
(49.125)⁸
36
3.0
Reserved
2.5
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
1.875
Reserved
Reserved
1.5
Reserved
Reserved
5,6,7,8,9
5,6,7
max
20
-
-
-
9*tREFI
3.3
3.3
<2.5
<2.5
<1.875
Units
NOTE
ns
ns
ns
ns
ns
ns
1,2,3,4,6,9,10
ns
4
ns
1,2,3,6
ns
1,2,3,4,6
ns
4
ns
4
ns
1,2,3,4,6
ns
1,2,3,4
ns
4
ns
1,2,3,6
ns
1,2,3,4
ns
4
ns
1,2,3,4,8
ns
4
ns
1,2,3
nCK
nCK
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