K4B2G0446D Datasheet, PDF (30/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
V_TT
CK
t_AON
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
V_SSQ
Figure 14. Definition of tAON
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
V_TT
CK
t_AONPD
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
V_SSQ
Figure 15. Definition of tAONPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOF
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
TD_TAON_DEF
Figure 16. Definition of tAOF
- 30 -
Rev. 1.01
DDR3L SDRAM