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K4B2G0446D Datasheet, PDF (41/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM
K4B2G0446D
K4B2G0846D
datasheet
Rev. 1.01
DDR3L SDRAM
11. 2Gb DDR3 SDRAM D-die IDD Specification Table
[ Table 42 ] IDD Specification for 2Gb DDR3 D-die
Symbol
IDD0
IDD1
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD2N
IDD2NT
IDDQ2NT
IDD2Q
IDD3P
IDD3N
IDD4R
IDDQ4R
IDD4W
IDD5B
IDD6
IDD7
IDD8
DDR3-1066 (7-7-7)
1.35V
1.5V
30
35
40
45
10
12
13
15
15
17
17
20
35
40
15
17
15
17
25
30
55
50
30
35
60
60
110
110
10
12
100
105
10
12
512Mx4 (K4B2G0446D)
DDR3-1333 (9-9-9)
1.35V
1.5V
35
40
45
50
10
12
13
15
15
20
20
25
35
40
15
20
15
17
25
35
70
60
30
35
75
70
115
115
10
12
125
125
10
12
NOTE : VDD condition : 1.45V for 1.35V operation, 1.575V for 1.5V operation
DDR3-1600 (11-11-11)
1.35V
1.5V
40
45
50
55
10
12
15
15
17
20
22
25
35
40
17
20
17
20
30
35
80
70
30
35
90
85
115
120
10
12
130
130
10
12
Unit NOTE
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Symbol
IDD0
IDD1
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD2N
IDD2NT
IDDQ2NT
IDD2Q
IDD3P
IDD3N
IDD4R
IDDQ4R
IDD4W
IDD5B
IDD6
IDD7
IDD8
DDR3-1066 (7-7-7)
1.35V
1.5V
30
35
40
45
10
12
13
15
15
17
17
20
65
70
15
17
15
17
25
30
50
65
45
50
55
70
110
110
10
12
95
105
10
12
256Mx8 (K4B2G0846D)
DDR3-1333 (9-9-9)
1.35V
1.5V
35
40
45
50
10
12
13
15
15
20
20
25
65
70
15
20
15
17
25
35
60
75
45
50
65
80
115
115
10
12
120
135
10
12
NOTE : VDD condition : 1.45V for 1.35V operation, 1.575V for 1.5V operation
DDR3-1600 (11-11-11)
1.35V
1.5V
40
45
50
55
10
12
15
15
17
20
22
25
65
70
17
20
17
20
30
35
65
90
45
50
75
95
115
120
10
12
125
140
10
12
Unit NOTE
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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