K4B2G0446D Datasheet, PDF (16/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
[ Table 10 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS (1.35V)
Slew Rate [V/ns]
tDVAC [ps] @ |V_IH/Ldiff(AC)| = 320mV
min
max
> 4.0
TBD
-
4.0
TBD
-
3.0
TBD
-
2.0
TBD
-
1.8
TBD
-
1.6
TBD
-
1.4
TBD
-
1.2
TBD
-
1.0
TBD
-
< 1.0
TBD
-
[ Table 11 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS (1.5V)
Slew Rate [V/ns]
tDVAC [ps] @ |V_IH/Ldiff(AC)| = 350mV
min
max
> 4.0
75
-
4.0
57
-
3.0
50
-
2.0
38
-
1.8
34
-
1.6
29
-
1.4
22
-
1.2
13
-
1.0
0
-
< 1.0
0
-
Rev. 1.01
DDR3L SDRAM
tDVAC [ps] @ |V_IH/Ldiff(AC)| = 270mV
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
tDVAC [ps] @ |V_IH/Ldiff(AC)| = 300mV
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
150
-
150
-
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