K4B2G0446D Datasheet, PDF (23/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
Rev. 1.01
DDR3L SDRAM
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
[ Table 23 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
Specification
Unit
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
1.35V
Maximum peak amplitude allowed for overshoot area (See Figure 10)
TBD
TBD
TBD
TBD
V
Maximum peak amplitude allowed for undershoot area (See Figure 10)
TBD
TBD
TBD
TBD
V
Maximum overshoot area above V_DDQ (See Figure 10)
Maximum undershoot area below V_SSQ (See Figure 10)
TBD
TBD
1.5V
TBD
TBD
TBD
TBD
TBD
TBD
V-ns
V-ns
Maximum peak amplitude allowed for overshoot area (See Figure 10)
0.4V
0.4V
0.4V
0.4V
V
Maximum peak amplitude allowed for undershoot area (See Figure 10)
0.4V
0.4V
0.4V
0.4V
V
Maximum overshoot area above V_DDQ (See Figure 10)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
V-ns
Maximum undershoot area below V_SSQ (See Figure 10)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
V_DDQ
V_SSQ
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
9.7 34ohm Output Driver DC Electrical Characteristics
A functional representation of the output buffer is shown below. Output driver impedance RON is defined by the value of external reference resistor RZQ
as follows:
RON₃₄ = RZQ/7 (Nominal 34.3ohms +/- 10% with nominal RZQ=240ohm)
The individual Pull-up and Pull-down resistors (RONpu and RONpd) are defined as follows
RONpu =
V_DDQ-V_OUT
l Iout l
under the condition that RONpd is turned off
RONpd =
V_OUT
l Iout l
under the condition that RONpu is turned off
Output Driver
V_DDQ
Ipu
To
other
circuity
RON
Pu
RON
Pd
Ipd
DQ
Iout
Vout
V_SSQ
Figure 11. Output Driver : Definition of Voltages and Currents
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