K4B2G0446D Datasheet, PDF (22/64 Pages) Samsung semiconductor – 2Gb D-die DDR3L SDRAM

K4B2G0446D
K4B2G0846D
datasheet
Rev. 1.01
DDR3L SDRAM
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
[ Table 22 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)
Parameter
Specification
Unit
DDR3-800
DDR3-1066 DDR3-1333 DDR3-1600
1.35V
Maximum peak amplitude allowed for overshoot area (See Figure 9)
TBD
TBD
TBD
TBD
V
Maximum peak amplitude allowed for undershoot area (See Figure 9)
TBD
TBD
TBD
TBD
V
Maximum overshoot area above V_DD (See Figure 9)
TBD
TBD
TBD
TBD
V-ns
Maximum undershoot area below V_SS (See Figure 9)
TBD
1.5V
TBD
TBD
TBD
V-ns
Maximum peak amplitude allowed for overshoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
V
Maximum peak amplitude allowed for undershoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
V
Maximum overshoot area above V_DD (See Figure 9)
Maximum undershoot area below V_SS (See Figure 9)
0.67V-ns
0.67V-ns
0.5V-ns
0.5V-ns
0.4V-ns
0.4V-ns
0.33V-ns
0.33V-ns
V-ns
V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
V_SS
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 9. Address and Control Overshoot and Undershoot Definition
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