K4B1G0446D Datasheet, PDF (59/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
1Gb DDR3 SDRAM
Note :Clock and Strobe are drawn on a different time scale.
tIS
tIH
CK
tIS tIH
CK
DQS
DQS
V_DDQ
tDS tDH
nominal
line
V_IH(AC) min
V_IH(DC) min
V_REF to ac
region
V_REF(DC)
tangent
line
tDS tDH
tVAC
tangent
line
V_IL(DC) max
V_IL(AC) max
nominal
line
V_SS
Delta TF
V_REF to ac
region
Delta TR
SeRtiuspinSgleSwignRaalt=e
tangent
line[V_IH(AC)min
Delta TR
-
V_REF(DC)]
Setup Slew Rate ^{tangent line[V}REF^{(DC) - V}IL^(AC)max]
Falling Signal ⁼
Delta TF
Figure 27 - Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS
(for ADD/CMD with respect to clock)
Page 59 of 60
Rev. 1.1 August 2008