K4B1G0446D Datasheet, PDF (21/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
1Gb DDR3 SDRAM
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT)
Parameter
DDR3-800
Specification
DDR3-1066 DDR3-1333
DDR3-1600
Maximum peak amplitude allowed for overshoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above V_DD (See Figure 9)
Maximum undershoot area below V_SS (See Figure 9)
0.67V-ns
0.67V-ns
0.5V-ns
0.5V-ns
0.4V-ns
0.4V-ns
0.33V-ns
0.33V-ns
Unit
V
V
V-ns
V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
V_SS
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 9. Address and Control Overshoot and Undershoot definition
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
DDR3-800
Specification
DDR3-1066 DDR3-1333
DDR3-1600
Maximum peak amplitude allowed for overshoot area (See Figure 11)
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area (See Figure 11)
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above V_DDQ (See Figure 11)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
Maximum undershoot area below V_SSQ (See Figure 11)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
Unit
V
V
V-ns
V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
V_DDQ
V_SSQ
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot definition
Page 21 of 60
Rev. 1.1 August 2008