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K4B1G0446D Datasheet, PDF (51/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification
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K4B1G04(08/16)46D
1Gb DDR3 SDRAM
[ Table 50 ] Derating values DDR3-1333/1600 tIS/tIH-ac/dc based - Alternate AC150 Threshold
∆tIS, ∆tIH Derating [ps] AC/DC based
Alternate AC150 Threshold -> VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV
CLK,CLK Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH
2.0
75
50
75
50
75
50
83
58
91
66
99
74 107 84
1.5
50
34
50
34
50
34
58
42
66
50
74
58
82
68
1.0
0
0
0
0
0
0
8
8
16
16
24
24
32
34
CMD/
ADD 0.9
0
-4
0
-4
0
-4
8
4
16
12
24
20
32
30
Slew 0.8
0
-10
0
-10
0
-10
8
-2
16
6
24
14
32
24
rate 0.7
0
-16
0
-16
0
-16
8
-8
16
0
24
8
32
18
V/ns
0.6
-1
-26
-1
-26
-1
-26
7
-18 15 -10 23
-2
31
8
0.5 -10 -40 -10 -40 -10 -40
-2
-32
6
-24 14 -16 22
-6
0.4 -25 -60 -25 -60 -25 -60 -17 -52
-9
-44
-1
-36
7
-26
1.0V/ns
∆tIS ∆tIH
115 100
90
84
40
50
40
46
40
40
40
34
39
24
30
10
15 -10
[ Table 51 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid transition
Slew Rate[V/ns]
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
< 0.5
tVAC @175mV [ps]
min
75
57
50
38
34
29
22
13
0
0
max
-
-
-
-
-
-
-
-
-
-
tVAC @150mV [ps]
min
175
170
167
163
162
161
159
155
150
150
max
-
-
-
-
-
-
-
-
-
-
Page 51 of 60
Rev. 1.1 August 2008
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