K4B1G0446D Datasheet, PDF (35/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
[Table 35] IDD2NT and IDDQ2NT Measurement - Loop Pattern¹
1Gb DDR3 SDRAM
0
0
D
1
0
0
0
0
0 00 0
0
0
0
-
1
D
1
0
0
0
0
0 00 0
0
0
0
2
D
1
1
1
1
0
0 00 0
0
F
0
3
D
1
1
1
1
0
0 00 0
0
F
0
1
4-7
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
2
8-11
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 2
3
12-15
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 3
4
16-19
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
5
20-23
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
6
24-27
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 6
7
28-31
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 7
Note :
1. DM must be driven Low all the time. DQS, DQS are MID-LEVEL.
2. DQ signals are MID-LEVEL.
[Table 36] IDD4R and IDDQ4R Measurement - Loop Pattern¹
0
0
RD
0
1
0
1
0
0 00 0
0
0
0
1
D
1
0
0
0
0
0 00 0
0
0
0
2,3
D,D
1
1
1
1
0
0 00 0
0
0
0
4
RD
0
1
0
1
0
0 00 0
0
F
0
5
D
1
0
0
0
0
0 00 0
0
F
0
6,7
D,D
1
1
1
1
0
0 00 0
0
F
0
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
Note :
1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
00000000
-
-
00110011
-
-
Page 35 of 60
Rev. 1.1 August 2008