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K4B1G0446D Datasheet, PDF (14/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification
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K4B1G04(08/16)46D
1Gb DDR3 SDRAM
8.0 AC & DC Input Measurement Levels
8.1 AC and DC Logic input levels for single-ended signals
[ Table 7 ] Single Ended AC and DC input levels for Command and Address
Symbol
Parameter
VIH.CA(DC) DC input logic high
VIL.CA(DC) DC input logic low
VIH.CA(AC) AC input logic high
VIL.CA(AC) AC input logic low
VIH.CA(AC150) AC input logic high
VIL.CA(AC150) AC input logic lowM
VREFCA(DC)
Reference Voltage for ADD,
CMD inuts
DDR3-800/1066
Min.
Max.
VREF + 100
VDD
VSS
VREF - 100
VREF + 175
-
-
VREF - 175
-
-
-
-
0.49*VDD
0.51*VDD
DDR3-1333/1600
Min.
Max.
VREF + 100
VDD
VSS
VREF - 100
VREF + 175
-
-
VREF - 175
VREF+150
-
-
VREF-150
0.49*VDD
0.51*VDD
Note :
1. For input only pins except RESET, VREF = VREFCA(DC)
2. See 9.6 "Overshoot and Undershoot specifications"
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)
4. For reference : approx. VDD/2 ± 15mV
Unit Notes
mV
1
mV
1
mV 1,2
mV 1,2
mV 1,2
mV 1,2
V
3,4
[ Table 8 ] Single Ended AC and DC input levels for DQ and DM
Symbol
Parameter
VIH.DQ(DC)
VIL.DQ(DC)
VIH.DQ(AC)
VIL.DQ(AC)
VREFDQ(DC)
DC input logic high
DC input logic low
AC input logic high
AC input logic low
I/O Reference Voltage(DQ)
DDR3-800/1066
Min.
Max.
VREF + 100
VDD
VSS
VREF - 100
VREF + 175
-
-
VREF - 175
0.49*VDD
0.51*VDD
DDR3-1333/1600
Min.
Max.
VREF + 100
VDD
VSS
VREF - 100
VREF + 150
-
-
VREF - 150
0.49*VDD
0.51*VDD
Unit Notes
mV
1
mV
1
mV 1,2,5
mV 1,2,5
V
3,4
Note :
1. For input only pins except RESET, VREF = VREFDQ(DC)
2. See "Overshoot and Undershoot specifications"
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)
4. For reference : approx. VDD/2 ± 15mV
5. Single ended swing requirement for DQS - DQS is 350mV (peak to peak). Differential swing for DQS - DQS is 700mV (peak to peak).
Page 14 of 60
Rev. 1.1 August 2008
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