K4B1G0446D Datasheet, PDF (28/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
1Gb DDR3 SDRAM
Begin point : Rising edge of CK - CK
with ODT being first registered low
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOFPD
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
Figure 17. Definition of tAOFPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
V_TT
CK
V_{RTT_Nom}
t_ADC
End point Extrapolated point at V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
End point
T_SW21
Extrapolated point
at V_{RTT_Nom}
T_SW11
V_SW1
V_SW2
V_{RTT_Wr}
t_ADC
T_SW22
V_{RTT_Nom}
T_SW12
End point Extrapolated point at V_{RTT_Wr}
V_SSQ
Figure 18. Definition of tADC
Page 28 of 60
Rev. 1.1 August 2008