K4B1G0446D Datasheet, PDF (42/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
1Gb DDR3 SDRAM
13.2 Refresh Parameters by Device Density
[ Table 42 ] Refresh parameters by device density
Parameter
Symbol
1Gb
All Bank Refresh to active/refresh cmd time
tRFC
110
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
tREFI
85 °C < T_CASE ≤ 95°C
3.9
2Gb
160
7.8
3.9
4Gb
300
7.8
3.9
8Gb
Units Note
350
ns
7.8
µs
3.9
µs
1
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
requirements referred to in this material.
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
[ Table 43 ] DDR3-800 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
DDR3-800
6-6-6
min
max
15
20
15
-
15
-
52.5
-
37.5
9*tREFI
2.5
3.3
6
5
[ Table 44 ] DDR3-1066 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CWL = 5
CWL = 6
CL = 7
CWL = 5
CWL = 6
CL = 8
CWL = 5
CWL = 6
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
min
13.125
13.125
13.125
50.625
37.5
2.5
1.875
1.875
DDR3-1066
7-7-7
Reserved
Reserved
Reserved
6,7,8
5,6
max
20
-
-
-
9*tREFI
3.3
<2.5
<2.5
Units
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3,6
1,2,3,4
4
1,2,3,4
4
1,2,3
Page 42 of 60
Rev. 1.1 August 2008