K4B1G0446D Datasheet, PDF (32/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
I_DD
V_DD
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
V_SS
I_DDQ^(optional)
1Gb DDR3 SDRAM
V_DDQ
DQS, DQS
DQ, DM,
TDQS, TDQS
R_TT = 25 Ohm
V_DDQ/2
V_SSQ
Figure 19 : Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above ]
Application specific
memory channel
environment
Channel
IO Power
Simulation
IDDQ
Test Load
IDDQ
Simulation
IDDQ
Measurement
Correlation
Correction
Channel IO Power
Number
Figure 20 :Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
Page 32 of 60
Rev. 1.1 August 2008