K4B1G0446D Datasheet, PDF (27/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
Figure 14. Definition of tAON
t_AON
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
Figure 15. Definition of tAONPD
t_AONPD
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
1Gb DDR3 SDRAM
V_TT
V_SSQ
V_TT
V_SSQ
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOF
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
Figure 16. Definition of tAOF
TD_TAON_DEF
Page 27 of 60
Rev. 1.1 August 2008