English
Language : 

K4B1G0446D Datasheet, PDF (16/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification
◁
K4B1G04(08/16)46D
8.3 AC and DC Logic Input Levels for Ditterential Signals
8.3.1 Differential signal definition
VIH.DIFF.AC.MIN
tDVAC
VIH.DIFF.MIN
1Gb DDR3 SDRAM
0.0
VIL.DIFF.MAX
VIL.DIFF.AC.MAX
half cycle
tDVAC
time
Figure 2 : Definition of differential ac-swing and "time above ac level" tDVAC
8.3.2 Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)
[ Table 9 ] Differential AC and DC Input Levels
Symbol
Parameter
DDR3-800/1066/1333/1600
min
max
unit
Note
VIHdiff
differential input high
+0.2
note 3
V
1
VILdiff
differential input low
note 3
-0.2
V
1
VIHdiff(AC)
differential input high ac
2 x (VIH(AC)-VREF)
note 3
V
2
VILdiff(AC)
differential input low ac
note 3
2 x (VREF - VIL(AC))
V
2
Notes:
1. Used to define a differential signal slew-rate.
2. for CK - CK use VIH/VIL(AC) of ADD/CMD and VREFCA; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(AC) of DQs and VREFDQ; if a
reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective
limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Reter to "overshoot and Undersheet
Specification "
[ Table 10 ] Allowed time before ringback (tDVAC) for CLK - CLK and DQS - DQS.
Slew Rate [V/ns]
tDVAC [ps] @ |VIH/Ldiff(AC)| = 350mV
min
max
> 4.0
75
-
4.0
57
-
3.0
50
-
2.0
38
-
1.8
34
-
1.6
29
-
1.4
22
-
1.2
13
-
1.0
0
-
< 1.0
0
-
tDVAC [ps] @ |VIH/Ldiff(AC)| = 300mV
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
150
-
150
-
Page 16 of 60
Rev. 1.1 August 2008
 ▷