K4B1G0446D Datasheet, PDF (58/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
1Gb DDR3 SDRAM
Note :Clock and Strobe are drawn on a different time scale.
tIS
tIH
CK
CK
DQS
DQS
V_DDQ
tDS tDH
V_IH(AC) min
V_IH(DC) min
dc to V_REF
region
V_REF(DC)
dc to V_REF
region
nominal
slew rate
V_IL(DC) max
V_IL(AC) max
tIS tIH
tDS tDH
nominal
slew rate
dc to V_REF
region
V_SS
Delta TR
Delta TF
Hold Slew Rate
Rising Signal
=
V_REF(DC) - V_IL(DC)max
Delta TR
Hold Slew Rate ^VIH^{(DC)min - V}REF^(DC)
Falling Signal ⁼
Delta TF
Figure 26 - Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock).
Page 58 of 60
Rev. 1.1 August 2008