K4B1G0446D Datasheet, PDF (43/60 Pages) Samsung semiconductor – 1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D
[ Table 45] DDR3-1333 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CWL = 5
CL = 6
CWL = 6
CWL = 7
CWL = 5
CL = 7
CWL = 6
CWL = 7
CWL = 5
CL = 8
CWL = 6
CWL = 7
CL = 9
CWL = 5,6
CWL = 7
CWL = 5,6
CL = 10
CWL = 7
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
1Gb DDR3 SDRAM
min
13.5
13.5
13.5
49.5
36
2.5
1.875
1.875
1.5
1.5
DDR3-1333
9 -9 - 9
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
(Optional)
6,7,8,9
5,6,7
max
20
-
-
-
9*tREFI
3.3
<2.5
<2.5
<1.875
<1.875
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3,7
1,2,3,4,7
4
4
1,2,3,4,7
1,2,3,4,
4
1,2,3,7
1,2,3,4,
4
1,2,3,4
4
1,2,3
5
Page 43 of 60
Rev. 1.1 August 2008