K4J55323QF-GC Datasheet, PDF (48/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
256M GDDR3 SDRAM
AC CHARACTERISTICS - II
Parameter
Symbol
Row active time
t_RAS
Row cycle time
t_RC
Refresh row cycle time
t_RFC
RAS to CAS delay for Read
t_RCDR
RAS to CAS delay for Write
t_RCDW
Row precharge time
t_RP
Row active to Row active
t_RRD
Last data in to Row precharge @ Normal pre-
charge
t_WR
Last data in to Row precharge @ Auto precharge t_{WR_A}
Last data in to Read command
t_CDLR
Mode register set cycle time
t_MRD
Auto precharge write recovery time + Precharge t_DAL
Exit self refresh to Read command
t_XSR
Power-down exit time
t_PDEX
Refresh interval time
t_REF
-14
Min Max
22
100K
31
-
39
-
10
-
6
-
9
-
8
-
9
-
7
5
-
6
-
18
-
20000
-
6tCK
+tIS
-
-
7.8
-15
Min Max
22
100K
31
-
39
-
10
-
6
-
9
-
8
-
9
-
7
5
-
6
-
18
-
20000
-
6tCK
+tIS
-
-
7.8
-16
Min Max
19
100K
27
-
33
-
9
-
5
-
8
-
7
-
8
-
7
4
-
5
-
16
-
20000
-
6tCK
+tIS
-
-
7.8
-20
Min Max
15
100K
21
-
27
-
7
-
4
-
6
-
5
-
7
-
7
3
-
4
-
13
-
20000
-
4tCK
+tIS
-
-
7.8
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
us
- 48 -
Rev 1.8 (Apr. 2005)