K4J55323QF-GC Datasheet, PDF (30/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
READ to PRECHARGE
T0
T1
T2
/CK
CK
COMMAND
READ
NOP
PRE
ADDRESS
Bank a,
Col n
Bank a
CL = 8
RDQS
DQ
256M GDDR3 SDRAM
T8
T8n
T9
T9n T10
NOP
NOP
t_RP
ACT
Bank a,
Row
DO
n
DON’T CARE
TRANSITIONING DATA
NOTE : 1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Read to precharge equals two clocks, which enables two data pairs of data-out.
5. Shown with nominal t_AC and t_DQSQ.
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
- 30 -
Rev 1.8 (Apr. 2005)