K4J55323QF-GC Datasheet, PDF (42/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
256M GDDR3 SDRAM
TRUTH TABLE - CURRENT STATE BANK n - COMMAND TO BANK m
CURRENT STATE /CS /RAS /CAS /WE
COMMAND/ ACTION
H
X
X
X DESELECT (NOP/ continue previous operation)
Any
L
H
H
H NO OPERATION (NOP/continue previous operation)
X
H
L
H DATA TERMINATOR DISABLE
Idle
X
X
X
X Any Command Otherwise Allowed to Bank m
Row Activating,
Active, or
Prechrging
L
L
H
H ACTIVE (Select and activate row)
L
H
L
H READ (Select column and start READ burst)
L
H
L
L WRITE (Select Column and start WRITE burst)
L
L
H
L PRECHARGE
L
L
H
H ACTIVE (Select and activate row)
Read
L
H
L
H READ (Select column and start new READ burst)
(Auto-Precharge
Disable)
L
H
L
L WRITE (Select column and start WRITE burst)
L
L
H
L PRECHARGE
L
L
H
H ACTIVE (Select and activate row)
Write
L
H
L
H READ (Select column and start READ burst)
(Auto-Precharge
Disabled)
L
H
L
L WRITE (Select column and start new WRITE burst)
L
L
H
L PRECHARGE
L
L
H
H ACTIVE (Select and activate row)
Read
L
H
L
H READ (Select column and start new READ burst)
(With
Auto-Precharge)
L
H
L
L WRITE (Select column and start WRITE burst)
L
L
H
L PRECHARGE
L
L
H
H ACTIVE (Select and activate row)
Write
L
H
L
H READ (Select column and start READ burst)
(With
Auto-Precharge)
L
H
L
L WRITE (Select column and start new WRITE burst)
L
L
H
L PRECHARGE
NOTES
8
6
6
6
6
6, 7
6
6
6
6
6
NOTES :
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see TRUTH TABLE- CKE ) and after t_XSNR has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank n and the
commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
- 42 -
Rev 1.8 (Apr. 2005)