K4J55323QF-GC Datasheet, PDF (41/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
256M GDDR3 SDRAM
Read w/ Auto- : Starts with registration of an READ command with auto precharge enabled and ends
Precharge Enabled when tRP has been met. Once t_RP is met, the bank will be in the idle state.
Write w/ Auto- : Starts with registration of a WRITE command with auto precharge enabled and ends
Precharge Enabled when t_RP has been met. Once t_RP is met, the bank will be in the idle state.
5. The following states must not be interrupted by any executable command ; COMMAND INHIBIT or NOP commands
must be applied on each positive clock edge during these states.
Refreshing : Starts with registration of an AUTO REFRESH command and ends when t_RC is met.
Once t_RC is met, the DDR2(x32) will be in the all banks idle state.
Accessing Mode : Starts with registration of a LOAD MODE REGISTER command and ends when t_MRD
Register has been met. Once t_MRD is met, the GDDR3(x32) SDRAM will be in the all banks idle state.
Precharge All : Starts with registration of a PRECHARGE ALL command and ends when t_RP is met.
Once t_RP is met, all banks will be in the idle state.
READ or WRITE : Starts with registration of the ACTIVE command and ends the last valid data nibble.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle, and bursts are not in progress.
8. May or may not be bank-specific ; If multiple banks are to be precharged, each must be in a valid state for precharging.
9. Left blank
10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled
and READs or WRITEs with auto precharge disabled.
11. Requires appropriate DM masking.
12. A WRITE command may be applied after the completion of the READ burst.
13. Except data termination disable.
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Rev 1.8 (Apr. 2005)