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K4J55323QF-GC Datasheet, PDF (4/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM | |||
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K4J55323QF-GC
256M GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM
with Uni-directional Data Strobe
FEATURES
⢠2.0V + 0.1V power supply for device operation
⢠2.0V + 0.1V power supply for I/O interface
⢠On-Die Termination (ODT)
⢠Output Driver Strength adjustment by EMRS
⢠Calibrated output drive
⢠Pseudo Open drain compatible inputs/outputs
⢠4 internal banks for concurrent operation
⢠Differential clock inputs (CK and CK)
⢠Commands entered on each positive CK edge
⢠CAS latency : 5, 6, 7, 8 and 9 (clock)
⢠Additive latency (AL): 0 and 1 (clock)
⢠Programmable Burst length : 4
⢠Programmable Write latency : 1, 2, 3, 4, 5 and 6 (clock)
⢠Single ended READ strobe (RDQS) per byte
⢠Single ended WRITE strobe (WDQS) per byte
⢠RDQS edge-aligned with data for READs
⢠WDQS center-aligned with data for WRITEs
⢠Data Mask(DM) for masking WRITE data
⢠Auto & Self refresh mode
⢠Auto Precharge option
⢠32ms, auto refresh (4K cycle)
⢠144 Ball FBGA
⢠Maximum clock frequency up to700MHz
⢠Maximum data rate up to 1.4Gbps/pin
⢠DLL for outputs
ORDERING INFORMATION
Part NO.
K4J55323QF-GC14
K4J55323QF-GC15
K4J55323QF-GC16
K4J55323QF-GC20*
Max Freq.
700MHz
667MHz
600MHz
500MHz
Max Data Rate
1400Mbps/pin
1334Mbps/pin
1200Mbps/pin
1000Mbps/pin
*K4J55323QF-GL20/VL20 : VDD & VDDQ = 1.8V+0.1V(1.7V ~ 1.9V)
*K4J55323QF-V is the Lead Free package part number
Interface
Pseudo
Open Drain
Package
144 - Ball FBGA
GENERAL DESCRIPTION
FOR 2M x 32Bit x 4 Bank GDDR3 SDRAM
The 8Mx32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words
by 32 bits, fabricated with SAMSUNGâs high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 5.6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory
system applications.
-4-
Rev 1.8 (Apr. 2005)
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