K4J55323QF-GC Datasheet, PDF (3/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
256M GDDR3 SDRAM
Revision History
Revision 0.5 (January 7 , 2004) - Preliminary spec
- Added "Dummy MRS" command during the power-up sequence. Typo corrected
Revision 0.4 (December 10 , 2003) - Preliminary spec
- Typo corrected
- Added K4J55323QF-GC12 (800MHz) in the spec
- Key AC parameter changes : Refer to the AC spec table on page 46,47
. Added tDAL in the AC characteristics table,
. Added AC parameter of -GC12 in the AC characteristics table,
. Changed tRC of -GC14 from 31tCK to 30tCK,
. Changed tRFC of -GC16 from 34tCK to 33tCK,
- DC changes : Refer to the DC characteristics table of page 45.
- Capacitance table change : Refer to the Capacitance table of page 45.
Revision 0.3 (November 13, 2003) - Target Spec
- Typo corrected
- Removed 800MHz from the spec
- Changed ICC6 from 4mA to 7mA
- Key AC parameter changes : Refer to the AC spec table on page 46,47
. Changed tWR of -GC14 from 6tCK to 9tCK,
. Changed tWR of -GC16 from 5tCK to 8tCK,
. Changed tWR of -GC20 from 4tCK to 6tCK
. Changed tPDEX and tXSR at low power from 100tCK to 300tCK
Revision 0.2 (October 17, 2003) - Target Spec
- Typo corrected
Revision 0.1 (September 26, 2003) - Target Spec
- Typo corrected
Revision 0.0 (September 25, 2003) - Target Spec
-3-
Rev 1.8 (Apr. 2005)